JPH0737323Y2 - カラーセンサー - Google Patents
カラーセンサーInfo
- Publication number
- JPH0737323Y2 JPH0737323Y2 JP1988040959U JP4095988U JPH0737323Y2 JP H0737323 Y2 JPH0737323 Y2 JP H0737323Y2 JP 1988040959 U JP1988040959 U JP 1988040959U JP 4095988 U JP4095988 U JP 4095988U JP H0737323 Y2 JPH0737323 Y2 JP H0737323Y2
- Authority
- JP
- Japan
- Prior art keywords
- film
- color filter
- semiconductor layer
- filter film
- glass substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 33
- 239000011521 glass Substances 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 26
- 230000001681 protective effect Effects 0.000 claims description 14
- 239000003779 heat-resistant material Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 description 113
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 5
- 239000003086 colorant Substances 0.000 description 5
- 238000004040 coloring Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 108010010803 Gelatin Proteins 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 229920000159 gelatin Polymers 0.000 description 3
- 239000008273 gelatin Substances 0.000 description 3
- 235000019322 gelatine Nutrition 0.000 description 3
- 235000011852 gelatine desserts Nutrition 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- PXOZAFXVEWKXED-UHFFFAOYSA-N chembl1590721 Chemical compound C1=CC(NC(=O)C)=CC=C1N=NC1=CC(C)=CC=C1O PXOZAFXVEWKXED-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004043 dyeing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005562 fading Methods 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- FTUYQIPAPWPHNC-UHFFFAOYSA-M sodium;4-[[4-[benzyl(ethyl)amino]phenyl]-[4-[benzyl(ethyl)azaniumylidene]cyclohexa-2,5-dien-1-ylidene]methyl]benzene-1,3-disulfonate Chemical compound [Na+].C=1C=C(C(=C2C=CC(C=C2)=[N+](CC)CC=2C=CC=CC=2)C=2C(=CC(=CC=2)S([O-])(=O)=O)S([O-])(=O)=O)C=CC=1N(CC)CC1=CC=CC=C1 FTUYQIPAPWPHNC-UHFFFAOYSA-M 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Spectrometry And Color Measurement (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988040959U JPH0737323Y2 (ja) | 1988-03-28 | 1988-03-28 | カラーセンサー |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988040959U JPH0737323Y2 (ja) | 1988-03-28 | 1988-03-28 | カラーセンサー |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01145143U JPH01145143U (en]) | 1989-10-05 |
| JPH0737323Y2 true JPH0737323Y2 (ja) | 1995-08-23 |
Family
ID=31267413
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988040959U Expired - Lifetime JPH0737323Y2 (ja) | 1988-03-28 | 1988-03-28 | カラーセンサー |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0737323Y2 (en]) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2546335Y2 (ja) * | 1991-05-21 | 1997-08-27 | 三洋電機株式会社 | 光センサ |
| KR100628238B1 (ko) * | 2004-12-30 | 2006-09-26 | 동부일렉트로닉스 주식회사 | 시모스 이미지 센서 및 그의 제조 방법 |
| KR101384247B1 (ko) * | 2006-04-28 | 2014-04-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 광전변환소자 및 광전변환소자의 제작 방법 |
| EP2075840B1 (en) | 2007-12-28 | 2014-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for dicing a wafer with semiconductor elements formed thereon and corresponding device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61232758A (ja) * | 1985-04-08 | 1986-10-17 | Nec Corp | カラ−フオトセンサアレイ |
| JPS63269570A (ja) * | 1987-04-27 | 1988-11-07 | Seiko Epson Corp | カラ−イメ−ジセンサ |
-
1988
- 1988-03-28 JP JP1988040959U patent/JPH0737323Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01145143U (en]) | 1989-10-05 |
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